GCMX080A120B2T1P
  • image of GCMX080A120B2T1P

GCMX080A120B2T1P

Category:
-
Manufacturer:
-
Description:
1200V 80 SIC MOSFET SIX-PACK MOD
Package:
Packaging:
Tray
RoHS：
YES
Price:
$41.24

Request a Quote

Stock 1613

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
M2P45M12W2-1LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
M2TP80M12W2-2LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
BSS8402DW
Shenzhen Slkormicro Semicon Co., Ltd.
50V 3@10V,0.13A 500MV 1 N-CHANNE
SL3134KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 350M@4.5V,0.75A 150MW
SL3139KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 660MA 700M@2.5V,0.66A 150MW
NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
MSIE40N90-6
N-MOSFET,40V,90A,DFN14X12
MSIE40N150-6
N-MOSFET,40V,150A,DFN14X12
FF06MR12A04MA2AKSA1
Infineon Technologies
HYBRIDPACK DSC S MODULE WITH SIC
GCMX080A120B2T1P
1200V 80 SIC MOSFET SIX-PACK MOD
Specifications
Part Status
Active
Mounting Type
Chassis Mount
Supplier Device Package
-
FET Feature
-
Grade
-
Qualification
-
Package / Case
Module
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
4V @ 5mA
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Configuration
6 N-Channel (Phase Leg)
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 18V
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 800V
Gate Charge (Qg) (Max) @ Vgs
56nC @ 18V
Power - Max
103W (Tc)