IRF8304MTRPBF
  • image of IRF8304MTRPBF

IRF8304MTRPBF

Category:
-
Manufacturer:
Description:
IRF8304 - 12V-300V N-CHANNEL POW
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$5.5

Request a Quote

Stock 1660

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-40°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 4.5 V
Package / Case
DirectFET™ Isometric MX
Vgs(th) (Max) @ Id
2.35V @ 100µA
Power Dissipation (Max)
2.8W (Ta), 100W (Tc)
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs
2.2mOhm @ 28A, 10V
Supplier Device Package
DirectFET™ Isometric MX