IRF60B217
  • image of IRF60B217

IRF60B217

Category:
-
Manufacturer:
Description:
TRENCH 40<-<100V
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$1.02

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-220-3
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Supplier Device Package
PG-TO220-3-1
Power Dissipation (Max)
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
2230 pF @ 25 V
Vgs(th) (Max) @ Id
3.7V @ 50µA
Rds On (Max) @ Id, Vgs
9mOhm @ 36A, 10V