FJ4B01100L1
  • image of FJ4B01100L1

FJ4B01100L1

Category:
-
Manufacturer:
Description:
MOSFET P-CH 12V 2.2A XLGA004
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
FET Type
P-Channel
Power Dissipation (Max)
360mW (Ta)
Vgs (Max)
±8V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V
Drain to Source Voltage (Vdss)
12 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package / Case
4-XFLGA, CSP
Supplier Device Package
XLGA004-W-0808-RA01
Rds On (Max) @ Id, Vgs
74mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds
459 pF @ 10 V