DB2G42600L1
  • image of DB2G42600L1

DB2G42600L1

Category:
-
Manufacturer:
Description:
DIODE SCHOT 40V 1A DCSP1006010N1
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES
Price:
$0.12

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
F1M
Shenzhen Slkormicro Semicon Co., Ltd.
1.3V@1A 500NS 1A 1KV SOD-123FL
SS34F
Shenzhen Slkormicro Semicon Co., Ltd.
40V INDEPENDENT TYPE 3A 550MV@3A
US1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 50NS INDEPENDENT TYPE 1A 2
ES3JBF
Shenzhen Slkormicro Semicon Co., Ltd.
3A 600V SMBF
ES2GB
Shenzhen Slkormicro Semicon Co., Ltd.
1.25V@2A 35NS 2A 400V SMB(DO-214
LL60P
Shenzhen Slkormicro Semicon Co., Ltd.
25V 100MA 600MV@30MA LL-34
US2MF
Shenzhen Slkormicro Semicon Co., Ltd.
1.65V@2A 75NS INDEPENDENT TYPE 2
SS310F
Shenzhen Slkormicro Semicon Co., Ltd.
100V INDEPENDENT TYPE 3A 850MV@3
ES1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 35NS INDEPENDENT TYPE 1A 2
ES5DB
Shenzhen Slkormicro Semicon Co., Ltd.
1V@5A 35NS INDEPENDENT 5A 200V S
Specifications
Part Status
Discontinued at
Mounting Type
Surface Mount
Current - Average Rectified (Io)
1A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Technology
Schottky
Voltage - DC Reverse (Vr) (Max)
40 V
Voltage - Forward (Vf) (Max) @ If
600 mV @ 1 A
Package / Case
0402 (1005 Metric)
Operating Temperature - Junction
150°C (Max)
Capacitance @ Vr, F
28pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr
30 µA @ 40 V
Supplier Device Package
DCSP1006010-N1
Reverse Recovery Time (trr)
8.7 ns