BSDL10S65E6
  • image of BSDL10S65E6

BSDL10S65E6

Category:
-
Manufacturer:
Description:
DIODE SIL CARBIDE 650V 10A 5DFN
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$5.04

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-55°C ~ 175°C
Current - Average Rectified (Io)
10A
Technology
SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F
500pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.45 V @ 10 A
Supplier Device Package
5-DFN (8x8)
Package / Case
4-PowerVSFN