BSDH10G65E2
BSDH10G65E2
  • image of BSDH10G65E2
  • image of BSDH10G65E2

BSDH10G65E2

Category:
-
Manufacturer:
Description:
DIODE SIL CARBIDE 650V 10A TO220
Package:
Packaging:
Tube
RoHS：
YES
Price:
$4.44

Request a Quote

Stock 4473

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
F1M
Shenzhen Slkormicro Semicon Co., Ltd.
1.3V@1A 500NS 1A 1KV SOD-123FL
SS34F
Shenzhen Slkormicro Semicon Co., Ltd.
40V INDEPENDENT TYPE 3A 550MV@3A
US1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 50NS INDEPENDENT TYPE 1A 2
ES3JBF
Shenzhen Slkormicro Semicon Co., Ltd.
3A 600V SMBF
ES2GB
Shenzhen Slkormicro Semicon Co., Ltd.
1.25V@2A 35NS 2A 400V SMB(DO-214
LL60P
Shenzhen Slkormicro Semicon Co., Ltd.
25V 100MA 600MV@30MA LL-34
US2MF
Shenzhen Slkormicro Semicon Co., Ltd.
1.65V@2A 75NS INDEPENDENT TYPE 2
SS310F
Shenzhen Slkormicro Semicon Co., Ltd.
100V INDEPENDENT TYPE 3A 850MV@3
ES1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 35NS INDEPENDENT TYPE 1A 2
ES5DB
Shenzhen Slkormicro Semicon Co., Ltd.
1V@5A 35NS INDEPENDENT 5A 200V S
Specifications
Mounting Type
Through Hole
Part Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Package / Case
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Current - Average Rectified (Io)
10A
Supplier Device Package
TO-220-2
Technology
SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Capacitance @ Vr, F
323pF @ 1V, 1MHz