BSDH08G65E2
BSDH08G65E2
  • image of BSDH08G65E2
  • image of BSDH08G65E2

BSDH08G65E2

Category:
-
Manufacturer:
Description:
DIODE SIL CARBIDE 650V 8A TO220
Package:
Packaging:
Tube
RoHS：
YES
Price:
$3.84

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Specifications
Mounting Type
Through Hole
Part Status
Active
Current - Average Rectified (Io)
8A
Package / Case
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Supplier Device Package
TO-220-2
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
267pF @ 1V, 1MHz