BSDD08G65E2
  • image of BSDD08G65E2

BSDD08G65E2

Category:
-
Manufacturer:
Description:
DIODE SIL CARBIDE 650V 8A TO252
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$3.84

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Current - Average Rectified (Io)
8A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252 (DPAK)
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
267pF @ 1V, 1MHz