APT10SCE120B
APT10SCE120B
  • image of APT10SCE120B
  • image of APT10SCE120B

APT10SCE120B

Category:
-
Manufacturer:
Description:
DIODE SIL CARB 1200V 43A TO247
Package:
Packaging:
Tube
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
F1M
Shenzhen Slkormicro Semicon Co., Ltd.
1.3V@1A 500NS 1A 1KV SOD-123FL
SS34F
Shenzhen Slkormicro Semicon Co., Ltd.
40V INDEPENDENT TYPE 3A 550MV@3A
US1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 50NS INDEPENDENT TYPE 1A 2
ES3JBF
Shenzhen Slkormicro Semicon Co., Ltd.
3A 600V SMBF
ES2GB
Shenzhen Slkormicro Semicon Co., Ltd.
1.25V@2A 35NS 2A 400V SMB(DO-214
LL60P
Shenzhen Slkormicro Semicon Co., Ltd.
25V 100MA 600MV@30MA LL-34
US2MF
Shenzhen Slkormicro Semicon Co., Ltd.
1.65V@2A 75NS INDEPENDENT TYPE 2
SS310F
Shenzhen Slkormicro Semicon Co., Ltd.
100V INDEPENDENT TYPE 3A 850MV@3
ES1DF
Shenzhen Slkormicro Semicon Co., Ltd.
1V@1A 35NS INDEPENDENT TYPE 1A 2
ES5DB
Shenzhen Slkormicro Semicon Co., Ltd.
1V@5A 35NS INDEPENDENT 5A 200V S
Specifications
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Package / Case
TO-247-2
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Supplier Device Package
TO-247
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Current - Average Rectified (Io)
43A
Capacitance @ Vr, F
630pF @ 1V, 1MHz